| --- Thu Feb 13 2014 | 00:00 | |
| azonenberg | Sync_: https://www.youtube.com/watch?v=Z2JWaImre64 | 14:57 |
|---|---|---|
| chris_99 | i thought FIB could only etch stuff, but that's filling something in? | 15:00 |
| Sync_ | neat | 15:03 |
| Sync_ | why shouldn't it fill something in | 15:03 |
| chris_99 | just didn't realise you could do that | 15:08 |
| Sync_ | we also have a fib at work | 15:11 |
| Sync_ | but nobody uses it | 15:11 |
| Sync_ | it is sad | 15:11 |
| chris_99 | so how do you control it to etch/fill, like what's the difference between those two | 15:12 |
| azonenberg | chris_99: When milling, you're sputtering atoms off the surface | 15:15 |
| azonenberg | For deposition you're basically doing CVD | 15:15 |
| azonenberg | you squirt a precursor gas into the chamber | 15:15 |
| azonenberg | it adsorbs onto the sample | 15:15 |
| azonenberg | beam ions and secondary electrons cause it to decompose | 15:15 |
| Sync_ | there are different methods | 15:15 |
| chris_99 | aha gotcha | 15:15 |
| azonenberg | the volatile part dissipates and the metal/whatever sticks | 15:15 |
| azonenberg | it's pretty much PECVD with the ions in a beam rather than a plasma filling the whole chamber | 15:16 |
| Sync_ | we bought the thing to do some fancy selective doping stuff but in the end we did not do that project | 15:19 |
| nmz787 | chris_99: you change the gas that's present in the chamber, and it changes the action of the impinging ions | 19:30 |
| nmz787 | chris_99: https://en.wikipedia.org/wiki/Focused_ion_beam#Usage | 19:32 |
| nmz787 | chris_99: that does an OK job for an intro | 19:32 |
| chris_99 | cheers | 19:32 |
| --- Fri Feb 14 2014 | 00:00 | |
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